Details: Form Factor M.2 2280 Capacity 500GB Memory Components V-NAND 3-bit MLC Interface SATA III Controller Samsung MJX Controller Cache Samsung 512MB Low Power DDR4 SDRAM Performance Max Sequential Read Up to 550 MBps Max Sequential Write Up to 520 MBps 4KB Random Read QD1: Up to 10,000 IOPS QD32: Up to 97,000 IOPS 4KB Random Write QD1: Up to 42,000 IOPS QD32: Up to 88,000 IOPS MTBF 1,500,000 hours Features: AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive) S.M.A.R.T. Support GC (Garbage Collection): Auto Garbage Collection Algorithm WWN Support: World Wide Name supported Device Sleep Mode Support Environmental Power Consumption (Idle) 50 mW Power Consumption (Active) Average: 2.5W Maximum: 4.0W (Burst mode) Operating Temperature 0°C ~ +70°C Storage Temperature -45°C ~ +85°C Operating Humidity 5% to 95% RH Max Shock Resistance 1,500G & 0.5 ms (Half sine) Max Vibration Resistance 20G Dimensions & Weight Height 2.30mm Width 22.00mm Depth 80.00mm Weight 80.00g
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